Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-03-06
2007-03-06
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S773000, C257SE21204, C257SE21621, C257SE21157
Reexamination Certificate
active
10395724
ABSTRACT:
In a method for manufacturing a semiconductor device having a laminated gate electrode, a phosphorus-doped polysilicon is formed on a gate oxide film. A high-melting metal or a compound of a high-melting metal and silicon is formed on the polysilicon. Phosphorus is doped into the polysilicon so that a concentration of the phosphorus in the polysilicon at an interface between the polysilicon and the gate oxide film is 2×1020(1/cm3) or less. Then, thermal oxidation is carried out in a wet-hydrogen atmosphere containing water vapor.
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Imamura Toshihiro
Ogawa Kazuo
Ohta Hiroyuki
Ohyu Kiyonori
Okonogi Kensuke
Elpida Memory Inc.
Hayes & Soloway P.C.
Toledo Fernando L.
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