Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2006-12-26

2009-12-29

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S211000, C438S735000, C438S736000, C438S655000, C438S664000, C438S682000, C257SE21199, C257SE21438

Reexamination Certificate

active

07638384

ABSTRACT:
Embodiments relate to a method of fabricating a semiconductor device. In embodiments, a gate pattern may be formed on a semiconductor substrate, and sidewalls having a lower height than a height of the gate pattern may be formed at both sides of the gate pattern using a photoresist pattern. A silicide layer may be formed on exposed upper surface and side surfaces of the gate pattern and a portion of the semiconductor substrate at both sides of the sidewalls. Therefore, the silicide layer formed on a gate may be enlarged, and may reduce gate resistance.

REFERENCES:
patent: 6043545 (2000-03-01), Tseng et al.
patent: 6162691 (2000-12-01), Huang
patent: 6169017 (2001-01-01), Lee
patent: 2001/0019156 (2001-09-01), Matsuo et al.
patent: 2004/0132274 (2004-07-01), Jun et al.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4145621