Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2008-07-08

2008-07-08

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21209

Reexamination Certificate

active

11130128

ABSTRACT:
According to the present invention, there is provided a semiconductor device fabrication method comprising:forming a first insulating film on a semiconductor substrate;forming a first conductive layer on the first insulating film;forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside;performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside;annealing the second insulating film in a second processing chamber; andforming a second conductive layer on the second insulating film.

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patent: 2007/0025145 (2007-02-01), Mokhlesi et al.
Ozawa, et al., “Nonvolatile Semiconductor Memory and Manufacturing Method for the Same”, U.S. Appl. No. 10/724,103, filed Dec. 1, 2003.
Lee et al, “A Novel HighKInter-Poly Dielectric (IPD), Al2O3for Low Voltage/High Speed Flash Memories: Erasing in msecs at 3.3V,” Symposium on VLSI Technology digest of Technical Papers (1997), pp. 117-118.

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