Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2005-07-19

2005-07-19

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

Reexamination Certificate

active

06919282

ABSTRACT:
A silicon oxynitride film is manufactured using SiH4, N2O and H2by plasma CVD, and it is applied to the gate insulating film (1004in FIG.1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.

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