Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2011-06-14

2011-06-14

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S700000, C438S759000, C438S778000, C438S780000, C438S421000, C438S422000, C257S506000, C257SE21011, C257SE21585, C257SE21597

Reexamination Certificate

active

07960290

ABSTRACT:
A method for fabricating a semiconductor device. A preferred embodiment comprises forming a via in a semiconductor substrate, filling the via with a disposable material such as amorphous carbon, forming a dielectric layer on the substrate covering the via, performing a back side etch to expose the disposable material in the via. A back side dielectric layer is then depositing, covering the exposed via. A small opening is then formed, and the disposable material is removed, for example by an isotropic etch process. The via may now be filled with a metal and used as a conductor or a dielectric material. The via may also be left unfilled to be used as an air gap.

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Chinese Patent Office, Office Action mailed Mar. 18, 2010; Application No. 200710149603.8, 7 pages.

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