Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2011-05-10
2011-05-10
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S706000, C438S745000, C257SE21023, C257SE21228, C257SE21229, C257SE21236, C257SE21240, C257SE21246, C257SE21247, C257SE21252, C257SE21257, C257SE21258, C257SE21278, C257SE21293, C257SE21435, C257SE21646
Reexamination Certificate
active
07939436
ABSTRACT:
A method of fabricating a semiconductor device forms a micro-sized gate, and mitigates short channel effects. The method includes a pull-back process to form the gate on a substrate. The method also includes forming inner and outer spacers on the gate that are asymmetric to one another with respect to the gate, and using the spacers in forming junction regions in the substrate on opposite sides of the gate. In particular, the inner and outer spacers are formed on opposite sides of the gate so as to have different thicknesses at the bottom of the gate. The inner and outer junction regions are formed by doping the substrate before and after the spacers are formed. Thus, the inner and outer junction regions have extension regions under the inner and outer spacers, respectively, and the extension regions have different lengths.
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Cho Keun-Hwi
Kim Min-Sang
Kim Sung-Min
Lee Ji-Myoung
Nhu David
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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