Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1996-12-10
1999-06-29
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430312, 430316, 430394, 430942, 2504923, G03F 720
Patent
active
059167335
ABSTRACT:
A method of fabricating a semiconductor device includes steps of forming a first insulating film, a conductive film, a second insulating film and a selected film in sequence on a substrate. Next, a first resist pattern is formed in a first region on the selected film by means of photo-lithography. The selected film is patterned by using the first resist pattern, after which the first resist pattern is removed. Next, a second resist pattern is formed in a second region on the surface of at least the second insulating film by means of electron beam lithography. The second insulating film is patterned by using the second resist pattern, after which the second resist pattern is removed. The conductive film is then patterned by using the patterned second insulating film as a mask. The selected film is provided with an etching characteristic substantially the same as that of the conductive film so that remaining portions thereof are removed during the conductive film patterning step.
REFERENCES:
patent: 4451554 (1984-05-01), Kishi et al.
patent: 4603473 (1986-08-01), Suemitsu et al.
patent: 4610948 (1986-09-01), Glendinning
patent: 4612274 (1986-09-01), Cho et al.
patent: 5034091 (1991-07-01), Trask et al.
patent: 5656128 (1997-08-01), Hashimoto et al.
patent: 5700705 (1997-12-01), Meguro et al.
patent: 5741625 (1998-04-01), Bae et al.
Duda Kathleen
Kabushiki Kaisha Toshiba
LandOfFree
Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1374741