Method of fabricating a semiconductor circuit having a...

Details Method of fabricating a semiconductor circuit having a... Method of fabricating a semiconductor circuit having a...

2005-05-23

2009-12-22

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21625

Reexamination Certificate

active

07635653

ABSTRACT:
A semiconductor integrated circuit that includes thereon a flash memory and a plurality of MOS transistors using different power supply voltages is formed by a process in which a thermal oxidation process is applied to one of the device regions while covering the other device regions by an oxidation-resistant film.

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patent: 05-308128 (1999-11-01), None
patent: 2000-349164 (2000-12-01), None
Kamgar, A., et al., “Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion”, Dec. 7-10, 1997, IEDM 1997, p. 695-8.

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