Method of fabricating a self-aligned contact trench DMOS transis

Details Method of fabricating a self-aligned contact trench DMOS transis Method of fabricating a self-aligned contact trench DMOS transis

1996-05-13

1997-09-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21265

Patent

active

056656190

ABSTRACT:
A trench DMOS transistor structure includes a contact to the transistor's source and body that is self-aligned to the trench. With a self-aligned contact, the distance from the edge of the source and body contact to the edge of the trench can be minimized. Thus, the distance between the trench edges can be reduced. As a result, the packing density of the transistor is increased dramatically. This gives rise to much improved performance in terms of low m-resistance and higher current drive capability. Alternate process modules are provided for fabricating the self-aligned contact structure.

REFERENCES:
patent: 5405794 (1995-04-01), Kim
patent: 5424231 (1995-06-01), Yang
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5532179 (1996-07-01), Chang et al.

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