Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-10
2010-02-09
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21209, C257SE21211, C257SE21662
Reexamination Certificate
active
07659566
ABSTRACT:
Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.
REFERENCES:
patent: 2006/0034022 (2006-02-01), Fukuzawa et al.
patent: 2007/0235710 (2007-10-01), Matsuzaki et al.
Ahn Seung-eon
Kim Hye-young
Kim You-seon
Park Byoung-ho
Yun Jung-bin
Harness & Dickey & Pierce P.L.C.
Hoang Quoc D
Samsung Electronics Co,. Ltd.
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