Method of fabricating a random access memory cell

Details Method of fabricating a random access memory cell Method of fabricating a random access memory cell

1997-06-11

2000-08-08

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438248, 438391, H01L 218242

Patent

active

061001317

ABSTRACT:
A random access memory cell having a trench capacitor formed below the surface of the substrate. A shallow trench isolation is provided to isolate the memory cell from other memory cells of a memory array. The shallow trench isolation includes a top surface raised above the substrate to reduce oxidation stress.

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