Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-27
1999-08-24
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, 438763, 438778, 438786, 438787, 438791, 438958, H01L 214763
Patent
active
059435992
ABSTRACT:
A metal layer (24) is formed on an isolation layer (22) to act as interconnections. Subsequently, a thin liner layer (26) is optionally formed along the surface of the metal layer (24) to serve as a buffer layer. An undoped silicate glass (USG) layer (28) is deposited on the liner layer (26). The USG layer (28) is formed using ozone and tetraethylorthosilicate (TEOS) as a source at a temperature of approximately 380 to 420.degree. C. Oxygen gas is used as a carrier for the ozone. The flow rate of the oxygen gas is approximately 4000 to 6000 sccm. Helium gas is used as a carrier for the TEOS. The flow rate of the helium is approximately 3000 to 5000 sccm. A silicon nitride layer (30) is deposited on the USG layer (28) using plasma enhanced chemical vapor deposition (PECVD). The silicon nitride layer (30) serves as a main passivation layer. The thickness of the silicon nitride layer (30) is approximately 3000 to 7000 angstroms.
REFERENCES:
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5795821 (1998-08-01), Bacchetta et al.
patent: 5849632 (1998-12-01), Tuttle et al.
Cherng Meng-Jaw
Huang Sen-Huan
Tsai Kwong-Jr
Tu Yeur-Luen
Yao Liang-Gi
Niebling John F.
Vanguard International Semiconductor Corporation
Zarneke David A.
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