Method of fabricating a non-volatile memory device

Details Method of fabricating a non-volatile memory device Method of fabricating a non-volatile memory device

2006-12-06

2008-12-16

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S261000, C257S314000, C257S325000

Reexamination Certificate

active

07465631

ABSTRACT:
A non-volatile memory device and a method of manufacturing the same, in which the program speed can be enhanced and the interference phenomenon can be reduced. The non-volatile memory device includes a semiconductor substrate having an active region defined by isolation layers arranged in one direction, a control gate arranged vertically to the direction in which the isolation layers are arranged, a floating gate formed on the active region below the control gate and having a lateral curve so that the floating gate has a width narrowed upwardly, a gate insulating layer formed between the floating gate and the semiconductor substrate, and a dielectric layer formed between the floating gate and the control gate.

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