Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-17
2006-10-17
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000, C438S300000
Reexamination Certificate
active
07122412
ABSTRACT:
A method of fabricating a double gate, FINFET device structure in a silicon on insulator layer, in which the channel region formed in the SOI layer is defined with a narrowed, or necked shape, and wherein a composite insulator spacer is formed on the sides of the device structure, has been developed. A FINFET device structure shape is formed in an SOI layer via anisotropic RIE procedures, followed by a growth of a silicon dioxide gate insulator layer on the sides of the FINFET device structure shape. A gate structure is fabricated traversing the device structure and overlying the silicon dioxide gate insulator layer located on both sides of the narrowest portion of channel region. After formation of a source/drain region in wider, non-channel regions of the FINFET device structure shape, composite insulator spacers are formed on the sides of the FINFET shape and on the sides of the gate structure. Metal silicide is next formed on source/drain regions resulting in a FINFET device structure featuring a narrow channel region, and surrounded by composite insulator spacers located on the sides of the device structure.
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Chan Yi-Ling
Chen Fang-Cheng
Chen Haur-Ywh
Hu Chenming
Yang Fu-Liang
Haynes and Boone LLP
Pham Hoai
Taiwan Semiconductor Manufacturing Company , Ltd.
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