Method of fabricating a MOSFET having a recessed channel

Details Method of fabricating a MOSFET having a recessed channel Method of fabricating a MOSFET having a recessed channel

2007-07-31

2007-07-31

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000

Reexamination Certificate

active

10699047

ABSTRACT:
A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a semiconductor substrate is greater than the CD of the gate electrode disposed on the semiconductor substrate. As a result, the misalignment margin for a photolithographic process used to form the gate electrodes can be increased, and both overlap capacitance and gate induced drain leakage (GIDL) can be reduced.

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English language abstract of Korea Publication No. 2000-0060693.
English language abstract of Korea Publication No. 2001-0064328.

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