Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S197000, C438S585000, C438S706000
Reexamination Certificate
active
06869868
ABSTRACT:
A method of forming a composite gate structure for a planar MOSFET device, as well as for vertical, double gate, FINFET device, has been developed. The method features a composite gate structure comprised of an overlying silicon gate structure shape, and an underlying titanium nitride gate structure shape. The titanium nitride component allows a lower work function, and thus lower device operating voltages to be realized when compared to counterpart gate structures formed with only polysilicon. A novel, two step gate structure definition procedure, featuring an anisotropic first etch procedure for definition of the polysilicon gate structure shape, followed by a wet or dry isotopic second etch procedure for definition of the titanium nitride gate structure shape, is employed.
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patent: 6100188 (2000-08-01), Lu et al.
patent: 6326251 (2001-12-01), Gardner et al.
patent: 6429109 (2002-08-01), Zheng et al.
Chen Fang-Cheng
Chen Haur-Ywh
Chiu Hsien-Kuang
Chiu Yuan-Hung
Tao Hun-Jan
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