Method of fabricating a metal-oxide-semiconductor transistor wit

Details Method of fabricating a metal-oxide-semiconductor transistor wit Method of fabricating a metal-oxide-semiconductor transistor wit

1998-05-20

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438301, 438688, H01L 213205, H01L 214763

Patent

active

06080646&

ABSTRACT:
A method of fabricating a MOS transistor having an aluminum gate is disclosed. On a MOS transistor having a polysilicon gate, an insulating layer is first formed. The device surface is then polished by CMP to expose the polysilicon gate. Then, an aluminum layer is formed on the substrate and then processed through annealing at more than 500.degree. C. so that a portion of the aluminum layer substitutes the polysilicon gate to form an aluminum gate. After removing the substituted polysilicon and the non-reacted aluminum, the NMOS transistor with an aluminum gate is completed.

REFERENCES:
patent: 5670432 (1997-09-01), Tsai
patent: 5801088 (1998-09-01), Gardner et al.
patent: 5923999 (1999-07-01), Balasubramanyam et al.
patent: 5981382 (1999-11-01), Konecni et al.

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