Method of fabricating a metal-insulator-metal capacitor

Details Method of fabricating a metal-insulator-metal capacitor Method of fabricating a metal-insulator-metal capacitor

2005-08-02

2005-08-02

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S393000, C438S618000, C438S611000, C438S381000

Reexamination Certificate

active

06924207

ABSTRACT:
A method of fabricating a semiconductor device is provided. The method includes forming an interconnection line over a ssubstrate. The interconnection line functions as a first electrode. A first insulating layer is formed on the substrate including the metal interconnection line. An electrode layer and an oxide layer are formed on the first insulating layer. A photoresist pattern is formed on the oxide layer. The oxide layer and the electrode layer are etched using the photoresist pattern as an etching mask. As a result, a second electrode and an oxide layer pattern, which are stacked, are formed over the interconnection line. At least the electrode layer is etched using a wet etching technique. The photoresist pattern is then removed.

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