Method of fabricating a mask ROM

Details Method of fabricating a mask ROM Method of fabricating a mask ROM

2007-11-27

2007-11-27

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S262000, C438S264000, C438S265000, C438S278000

Reexamination Certificate

active

11319497

ABSTRACT:
A mask ROM and fabrication method thereof are disclosed, in which a bit line is formed of a conductive material such as polysilicon, by which a device size can be minimized, and by which resistance characteristics are enhanced.

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