Method of fabricating a linearized output driver and terminator

Details Method of fabricating a linearized output driver and terminator Method of fabricating a linearized output driver and terminator

2007-07-31

2007-07-31

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S382000, C438S383000

Reexamination Certificate

active

10394977

ABSTRACT:
A method and apparatus for a linearized output driver and terminator is described. In one embodiment the method includes forming a gate electrode on a substrate, the portion of the substrate covered by the gate electrode defining a channel. The method further includes forming a first source/drain doped region on laterally opposed sides of the gate electrode in the substrate. The method also includes forming a spacer on laterally opposed sides of the gate electrode on the substrate. The method also includes forming a linearized drain contact region at a location within the first source/drain doped region sufficiently distant from the gate electrode to define a series resistor in the first source/drain doped region disposed between the gate electrode and the linearized drain contact area based on an expected resistivity of the source/drain doped region, the series resistor coupled electrically to the channel.

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