Method of fabricating a kink-effect-free shallow trench isolatio

Details Method of fabricating a kink-effect-free shallow trench isolatio Method of fabricating a kink-effect-free shallow trench isolatio

1998-11-30

2000-11-21

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438694, 438696, 438697, 438719, H01L 21302

Patent

active

061502731

ABSTRACT:
A method of fabricating kink-effect-free shallow trench isolations is presented in this invention. First, a layer of silicon oxide and a layer of polysilican are sequentially deposited on a substrate, and then shallow trenches are formed, next thermal oxidation is performed to grow a passivation oxide layer on the exposed silicon, and then, a dielectric layer is formed to fill into the shallow trench. Finally, the dielectric layer on the active area is removed by using chemical mechanical polishing and the polysilicon layer provides for the etching end point. The level of shallow trench is higher than the level of active area as soon as stop polishing, because the polysilicon layer is polished faster than dielectric layer. It provides the passivation oxide on the sidewall of shallow trench to form spacers of the active area after removing the polysilicon of active area. It can provide a perfect shallow trench after an oxidation and etching process to avoid the kink effect.

REFERENCES:
patent: 4307180 (1981-12-01), Pogge
patent: 4740480 (1988-04-01), Ooka
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5436190 (1995-07-01), Yang et al.
patent: 5521422 (1996-05-01), Mandelman et al.
patent: 5536675 (1996-07-01), Bohr
patent: 5614430 (1997-03-01), Liang et al.
patent: 5683932 (1997-11-01), Bashir et al.

Affiliated with

Also associated with

Rating

Method of fabricating a kink-effect-free shallow trench isolatio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a kink-effect-free shallow trench isolatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a kink-effect-free shallow trench isolatio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256782