Method of fabricating a heterojunction bipolar transistor

Details Method of fabricating a heterojunction bipolar transistor Method of fabricating a heterojunction bipolar transistor

2006-04-03

2009-11-17

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29033, C438S312000

Reexamination Certificate

active

07618858

ABSTRACT:
The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region (23), which is formed self-aligned to a base region (7) without applying photolithographic techniques. Further, a collector connecting region (31) and an emitter region (29) are formed simultaneously and self-aligned to the base connecting region (23) without applying photolithographic techniques.

REFERENCES:
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patent: 2003/0032252 (2003-02-01), Pan et al.
patent: 2004/0150004 (2004-08-01), Aoki et al.
patent: 2004/0155262 (2004-08-01), He et al.
patent: 2005/0048735 (2005-03-01), Khater et al.
patent: 0795899 (1997-09-01), None
patent: 2005024900 (2005-03-01), None

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