Method of fabricating a floating gate

Details Method of fabricating a floating gate Method of fabricating a floating gate

2005-07-19

2005-07-19

Chaudhari, Chandra (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S657000, C438S660000

Reexamination Certificate

active

06919247

ABSTRACT:
A method of fabricating a floating gate for a semiconductor device is disclosed and provided. According to this method, an undoped polycrystalline silicon layer is deposited on a tunnel oxide layer. The undoped polycrystalline silicon layer has a first thickness. Moreover, a doped polycrystalline silicon layer is deposited on the undoped polycrystalline silicon layer. The doped polycrystalline silicon layer has a second thickness. The undoped polycrystalline silicon layer and the doped polycrystalline silicon layer form the floating gate having a third thickness. In an embodiment, the semiconductor device is a flash memory device.

REFERENCES:
patent: 4914046 (1990-04-01), Tobin et al.
patent: 5817547 (1998-10-01), Eom
patent: 5981364 (1999-11-01), Ramsbey et al.
patent: 6211046 (2001-04-01), Sekikawa et al.
patent: 2002/0086503 (2002-07-01), Schuegraf et al.

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