Method of fabricating a flash memory device

Details Method of fabricating a flash memory device Method of fabricating a flash memory device

1997-06-20

1999-03-30

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, H01L 218247

Patent

active

058888691

ABSTRACT:
The present invention discloses a method of fabricating a flash memory device. In the present invention, since the dielectric film formed in the memory cell region is only exposed to the cleaning solution which is used in cleaning process preformed after removing the dielectric film formed in the low voltage transistor region, the number of damages applied to the dielectric film can be minimized, therefore, a good dielectric film can be obtained.

REFERENCES:
patent: 5175120 (1992-12-01), Lee
patent: 5183773 (1993-02-01), Miyata
patent: 5292681 (1994-03-01), Lee et al.
patent: 5478767 (1995-12-01), Hong
patent: 5514889 (1996-05-01), Cho et al.
patent: 5658812 (1997-08-01), Araki
patent: 5712178 (1998-01-01), Cho et al.
patent: 5723355 (1998-03-01), Chang et al.

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