Method of fabricating a flash memory cell

Details Method of fabricating a flash memory cell Method of fabricating a flash memory cell

1998-11-05

2000-10-03

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 218247

Patent

active

06127223&

ABSTRACT:
The present invention provides a method of fabricating a flash memory cell without silicide formation on the source regions. A liquid deposition oxide layer is formed selectively only on a common source region by using a mask layer. The liquid deposition oxide layer is formed on the common source region in order to cover the common source region. Therefore, once a salicide step is performed, a silicide layer will not form on the common source region.

REFERENCES:
patent: 5646059 (1997-07-01), Sheu et al.
patent: 5770501 (1998-06-01), Hong
patent: 6033956 (2000-03-01), Wu

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