Method of fabricating a finfet

Details Method of fabricating a finfet Method of fabricating a finfet

2005-11-08

2005-11-08

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S151000, C438S156000, C438S157000, C438S283000

Reexamination Certificate

active

06962843

ABSTRACT:
A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming a silicon fin on a top surface of the dielectric layer; (d) forming a protective layer on at least one sidewall of the fin; and (e) removing the protective layer from the at least one sidewall in a channel region of the fin. In a second embodiment, the protective layer is converted to a protective spacer.

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