Method of fabricating a fin transistor

Details Method of fabricating a fin transistor Method of fabricating a fin transistor

2007-02-20

2007-02-20

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S284000

Reexamination Certificate

active

11025244

ABSTRACT:
A method of fabricating a fin transistor is disclosed. An example method stacks a mask oxide layer and a nitride layer on a semiconductor substrate, forms a fin by etching the nitride and mask oxide layers and silicon, forms an insulating oxide layer, and forms a gate electrode by etching the insulating oxide layer corresponding to a gate forming area using a gate mask, by forming a gate oxide layer on a sidewall of the silicon exposed by the etch and burying a metal. The example method also removes the remaining insulating oxide layer using an etch rate difference, forms a gate spacer, and forms source/drain regions in the silicon substrate to be aligned with the gate electrode. Additionally, the example method forms a second insulating oxide layer over the substrate, etches the second insulating oxide layer using a metal mask, forms contact holes on the source/drain regions, respectively, and fills the contact holes and the portion etched via the metal mask with a metal.

REFERENCES:
patent: 6835609 (2004-12-01), Lee et al.
patent: 6855583 (2005-02-01), Krivokapic et al.
patent: 6864164 (2005-03-01), Dakshina-Murthy et al.
patent: 6916694 (2005-07-01), Hanafi et al.
patent: 2002/0153587 (2002-10-01), Adkisson et al.

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