Method of fabricating a fin field effect transistor having a...

Details Method of fabricating a fin field effect transistor having a... Method of fabricating a fin field effect transistor having a...

2007-10-23

2007-10-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S135000, C438S156000, C438S175000, C438S508000

Reexamination Certificate

active

11295770

ABSTRACT:
In a method of fabricating a fin field effect transistor having a plurality of protruding channels, the fin field effect transistor is formed by forming a dummy gate pattern on a first hard mask pattern and a first insulating layer on a semiconductor substrate having an active region pattern, forming a source and drain region in a portion of the active region pattern, forming a plurality of vertically protruding channels between the source and drain region, forming a gate dielectric layer on the active region pattern having the plurality of protruding channels, and forming a gate electrode on the gate dielectric layer.

REFERENCES:
patent: 6391782 (2002-05-01), Yu
patent: 6562665 (2003-05-01), Yu
patent: 6642090 (2003-11-01), Fried et al.
patent: 6664582 (2003-12-01), Fried et al.
patent: 2004/0219722 (2004-11-01), Pham et al.
patent: 2005/0051825 (2005-03-01), Fujiwara et al.
patent: 10-2002-0096654 (2002-12-01), None

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