Method of fabricating a field effect transistor with short gate

Details Method of fabricating a field effect transistor with short gate Method of fabricating a field effect transistor with short gate

1997-06-24

1998-06-23

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438305, H01L 21336

Patent

active

057705062

ABSTRACT:
On a silicon substrate in which boron (B) has been introduced, an n.sup.+ polysilicon film and a tungsten silicide film are sequentially deposited, with a gate oxide film being interposed between the substrate and the polysilicon film, to form a gate electrode. A sidewall of p.sup.+ polysilicon is formed at each side of said gate electrode. A source/drain diffusion layer of an n.sup.+ region is self-aligned with a side edge portion of the gate electrode including the sidewall. The formation of the sidewall is performed after the source/drain diffusion layers have been formed using a dummy sidewall. The gate structure thus formed has a steep potential gradient in the lateral direction of channel region. In the field effect transistor thus formed, the short channel effect is efficiently suppressed.

REFERENCES:
patent: 4745079 (1988-05-01), Pfiester
patent: 4978626 (1990-12-01), Poon et al.
patent: 5019879 (1991-05-01), Chin
patent: 5061647 (1991-10-01), Roth et al.
patent: 5164805 (1992-11-01), Lee
patent: 5202277 (1993-04-01), Kameyama et al.
patent: 5217913 (1993-06-01), Watabe et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5443996 (1995-08-01), Lee et al.
patent: 5512506 (1996-04-01), Chang et al.
patent: 5547885 (1996-08-01), Ogoh
Wolf et al., Silicon Processing For The VLSI Era, vol. II, Lattice Press, 1990, pp. 144-150, 167-169, 354-359, 434-441.
Ogura, S., et al., "A Half Micron MOSFET Using Double Implanted LDD", IEEE, 1982, pp. 718-720.

Affiliated with

Also associated with

Rating

Method of fabricating a field effect transistor with short gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a field effect transistor with short gate , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a field effect transistor with short gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1394316