Method of fabricating a dynamic random access memory (DRAM) cell

Details Method of fabricating a dynamic random access memory (DRAM) cell Method of fabricating a dynamic random access memory (DRAM) cell

1995-03-09

1998-03-10

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438735, H01L 218242

Patent

active

057260850

ABSTRACT:
A storage node 64 of a capacitor having increased charge storage capacity and a method for forming thereof. A doped polysilicon region 68 is formed. A thin layer of hemispherical grain polysilicon 70 is deposited over the doped polysilicon region 68. The doped polysilicon region 68 and the thin layer of hemispherical grain polysilicon 70 are etched using an etch chemistry that etches the doped polysilicon region 68 faster than the thin layer of hemispherical grain polysilicon 70 to increase the surface area of an upper surface 66 of the storage node 64.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5256587 (1993-10-01), Jun et al.
patent: 5342800 (1994-08-01), Jun
patent: 5350707 (1994-09-01), Ko et al.
patent: 5387531 (1995-02-01), Rha et al.
M. Sakao, N. Kasai, T. Ishijima, E. Ikawa, H. Watanbe, K. Tarada and T. Kikkawa; "A Capacitor-Over-Bit-Line (COB) Cell With A Hemispherical-Grain Storage Node for 64 Mb DRAMs"; IEDM 90, 1990 IEEE, pp. 655-658.
J.H. Ahn, Y. W. Park, J.H. Shin, S.T. Kim, S.P. Shim, S.W. Nam, W.M. Park, H.B. Shin, C.S. Choi, K.T. Kim, D. Chin, O.H. Kwon and C.G. Hwang; "Micro Villus Patterning (MVP) Technology for 256Mb DRAM Stack Cell"; 1992 Symposium on VLSI Technology Digest of Technical Papers; 1992 IEEE, pp. 12-13.

Affiliated with

Also associated with

Rating

Method of fabricating a dynamic random access memory (DRAM) cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a dynamic random access memory (DRAM) cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a dynamic random access memory (DRAM) cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-138846