Method of fabricating a dynamic random access memory device

Details Method of fabricating a dynamic random access memory device Method of fabricating a dynamic random access memory device

1997-12-23

2000-09-05

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, 438582, 257303, H01L 218242, H01L 2120

Patent

active

06114200&

ABSTRACT:
A method of fabricating a DRAM device to reduce the stress and enhance the adhesion between the top electrode and the interlevel dielectric layer, includes forming a titanium layer between the top electrode and the interlevel dielectric layer. A titanium oxide layer and a titanium silicide are formed between the titanium layer and the interlevel dielectric layer in post thermal procedures, which enhances the adhesion and avoids cracks and leakage current between the top electrode and the interlevel dielectric layer.

REFERENCES:
patent: 5187557 (1993-02-01), Zenke
patent: 5279985 (1994-01-01), Kamiyama
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5879981 (1999-03-01), Tanigawa

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