Method of fabricating a dynamic random access memory device

Details Method of fabricating a dynamic random access memory device Method of fabricating a dynamic random access memory device

1997-12-30

2000-11-14

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438396, 438398, H01L 218242, H01L 21368

Patent

active

061469408

ABSTRACT:
A method of fabricating a dynamic random access memory is disclosed, which mainly utilizing selective liquid-phase deposition process to form an insulation layer on the gate electrode structure.

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patent: 5429956 (1995-07-01), Shell et al.
patent: 5554557 (1996-09-01), Koh
patent: 5565376 (1996-10-01), Lur et al.
patent: 5583358 (1996-12-01), Kimura et al.
patent: 5696036 (1997-12-01), Su et al.
patent: 5872041 (1999-02-01), Lee et al.

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