Method of fabricating a dynamic random access memory

Details Method of fabricating a dynamic random access memory Method of fabricating a dynamic random access memory

2008-12-01

2011-12-06

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S405000, C257SE21646, C257SE21647

Reexamination Certificate

active

08071440

ABSTRACT:
A method of fabricating a dynamic random access memory is provided. First, a substrate at least having a memory device area and a peripheral device area is provided, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area. A first oxide layer is formed on the substrate of the peripheral device area, and a passing gate isolation structure is formed on the substrate of the memory device area at the same time. A second oxide layer is formed on the substrate of the memory device area. And a first transistor is formed on the substrate of the memory device area, a passing gate is formed on the passing gate isolation structure, and a second transistor is formed on the substrate of the peripheral device area.

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