Method of fabricating a DRAM capacitor

Details Method of fabricating a DRAM capacitor Method of fabricating a DRAM capacitor

1999-05-27

2000-11-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438398, 438947, H01L 218242

Patent

active

061502170

ABSTRACT:
A method of fabricating a DRAM capacitor. A silicon germanium layer is formed on a lower electrode of the capacitor. The silicon germanium layer is oxidized to form a segregated grained germanium layer and a silicon oxide layer where the segregated grained germanium is distributed on the lower electrode. The silicon oxide layer is then removed. Using the segregated grained germanium as a hard mask, the lower electrode is etched to a depth to form a multi-cylinder structure. The segregated grained germanium is then removed. A capacitor dielectric layer and an upper electrode are successively formed on the multi-cylinder structure.

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