Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-20
1999-02-02
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438307, 438306, 438491, H01L 21336
Patent
active
058664599
ABSTRACT:
A MOS transistor structure is provided in which the source/drain contacts are to raised polysilicon and are located entirely over field isolation. Contact integrity is maintained because the contact is located on field oxide, rather than in direct contact with the substrate junction diffusion area. Conventional contact metal spiking into the junction area is also eliminated. Contact overetch during formation of the contact opening can be increased to insure a clean contact surface because the contact is made to the raised poly regions. Furthermore, the contact barrier is no longer essential for maintaining contact reliability, because the contact is located away from the active junction.
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Naem Abdalla Aly
Shenasa Mohsen
Dang Trung
National Semiconductor Corporation
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