Method of fabricating a capacitor of dynamic random access memor

Details Method of fabricating a capacitor of dynamic random access memor Method of fabricating a capacitor of dynamic random access memor

1998-01-20

2000-11-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

06153465&

ABSTRACT:
A method of fabricating a capacitor of a dynamic random access memory is provided. A substrate is first provided, wherein a first dielectric layer is formed on the substrate, and a via is formed through the first dielectric layer to expose one of source/drain regions. A conductive material is formed on the first dielectric layer so that the conductive material is filled in the via to contact with the one of the source/drain regions. The conductive material is patterned to form a first conductive layer. A hemispherical polysilicon grain layer is formed at least on the first conductive layer. The hemispherical polysilicon grain layer is etched back so that the first conductive layer and the hemispherical polysilicon grain layer together form a lower electrode. A second dielectric layer is formed on the lower electrode. A second conductive layer is formed on the second dielectric layer to be an upper electrode.

REFERENCES:
patent: 5447878 (1995-09-01), Park et al.
patent: 5554557 (1996-09-01), Koh
patent: 5650351 (1997-07-01), Wu
patent: 5726085 (1998-03-01), Crenshaw et al.
patent: 5874336 (1999-02-01), Cherng

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