Method of fabricating a capacitor

Details Method of fabricating a capacitor Method of fabricating a capacitor

2005-11-07

2008-10-21

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

C117S092000

Reexamination Certificate

active

07439197

ABSTRACT:
A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.

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Korean Office Action dated Jan. 31, 2006.

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