Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-09-27
2005-09-27
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S791000, C438S901000
Reexamination Certificate
active
06949477
ABSTRACT:
A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.
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Al-Shareef Husam N.
DeBoer Scott J.
Gealy Dan
Weimer Ronald A.
Dang Phuc T.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
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