Method of fabricating a Bi-CMOS IC device including a self-align

Details Method of fabricating a Bi-CMOS IC device including a self-align Method of fabricating a Bi-CMOS IC device including a self-align

1998-10-08

2000-12-05

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438309, 438207, 438234, 438366, H01L 218238

Patent

active

061565954

ABSTRACT:
A method for producing a bipolar transistor and an MOS transistor of the present invention includes the steps of: forming a first insulation film in an MOS transistor region where the MOS transistor is to be formed and in a bipolar transistor region where the bipolar transistor is to be formed; forming a first conductive film and a second insulation film on the first insulation film; and removing the second insulation film, the first conductive film and the first insulation film from the bipolar transistor region.

REFERENCES:
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 5037768 (1991-08-01), Cosentino
patent: 5100811 (1992-03-01), Winnerl et al.
patent: 5124271 (1992-06-01), Havemann
patent: 5354699 (1994-10-01), Ikeda et al.
patent: 5824560 (1998-10-01), Van Der Wel et al.

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