Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-14
2008-10-14
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21545
Reexamination Certificate
active
07435642
ABSTRACT:
A method of evaluating the uniformity of the thickness of the polysilicon gate layer is provided. A substrate having a dense trenches area and a sparse trenches area is provided. A plurality of first trench isolation structures are formed in the sparse trenches area of the substrate and a plurality of second trench isolation structures are simultaneously formed in the dense trenches area of the substrate. A mask layer is formed between the gaps of the first and the second trench isolation structures. A portion of the first trench isolation structures of the sparse trenches area is then removed. Then, the mask layer is removed until the surface of the substrate is exposed. A polysilicon gate layer is formed over the substrate. Finally, a planarization process is performed to remove a portion of the polysilicon gate layer.
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Hiroshi Matsuo
Tsai Yuan-Chen
Tung Shih-Jan
Wang Ta-Jen
Jianq Chyun IP Office
Le Thao P.
Powerchip Semiconductor Corp.
Renesas Technology Corp.
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