Method of etching silicon substrate at different etching rates f

Details Method of etching silicon substrate at different etching rates f Method of etching silicon substrate at different etching rates f

1993-10-22

1997-11-04

Tsai, Jey

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566281, 1566331, 1566471, 1566541, 437226, B44C 122

Patent

active

056835469

ABSTRACT:
The present invention is for enlarging a freedom of layout including an air bridge pattern and enhancing the availability for various purposes. A mask layer including an air bridge pattern is formed on a (100) plane of a silicon substrate, isotropic etching is carried out until a point of intersection between tangents of a peripheral curved plane comes to under the air bridge pattern plane, and then an air bridge is formed by means of anisotropic etching.

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