Method of etching oxide layer and nitride layer

Details Method of etching oxide layer and nitride layer Method of etching oxide layer and nitride layer

2010-01-29

2011-10-11

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S294000, C438S689000, C257SE21540, C257SE21598, C257SE21662

Reexamination Certificate

active

08034690

ABSTRACT:
An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

REFERENCES:
patent: 5950086 (1999-09-01), Takahashi et al.
patent: 6500768 (2002-12-01), Shields et al.
patent: 6583066 (2003-06-01), Aloni et al.

Affiliated with

Also associated with

Rating

Method of etching oxide layer and nitride layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching oxide layer and nitride layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching oxide layer and nitride layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4278191