Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-07-16
2000-03-14
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438742, H01L 2700
Patent
active
060372672
ABSTRACT:
There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature. The metallic film is etched such that trenches in the metallic film are formed with predetermined trench qualities including a predetermined trench critical dimension no greater than a critical dimension associated with large scale integration.
REFERENCES:
patent: 4771730 (1988-09-01), Tezuka
patent: 5539179 (1996-07-01), Nozawa et al.
patent: 5556500 (1996-09-01), Hasegawa et al.
Cha Hun
Kim Sung-kyeong
Powell William
Samsung Electronics Co,. Ltd.
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