Method of etching magnetic and ferroelectric materials using...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C216S063000, C216S067000, C134S001100, C134S026000, C438S706000, C438S710000

Reexamination Certificate

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06942813

ABSTRACT:
A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.

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