Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-05
2007-06-05
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S714000, C216S067000
Reexamination Certificate
active
10492541
ABSTRACT:
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.
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Hyland Sandra
Kajimoto Minori
Mosden Aelan
Tokyo Electron Limited
Vinh Lan
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