Method of etching copper layers

Details Method of etching copper layers Method of etching copper layers

1994-04-28

1995-04-25

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156666, 252 792, B44C 122, C23F 100

Patent

active

054095670

ABSTRACT:
A method for etching a composite copper layer (40) of plated copper (20) overlying physical vapor deposited copper (30) comprises etching the plated copper (20) at a rate less than the rate of etch of the physical vapor deposited copper (30). The etching may be accomplished with an aqueous solution of ammonium peroxydisulfate with molar concentrations of ammonium ions between 0.0438 and 0.1052, at a temperature between 30.degree. and 35.degree. C. and with the pH buffered to remain at a value between 1 and 1.8.

REFERENCES:
patent: 4354895 (1982-10-01), Ellis
patent: 5242535 (1993-09-01), Tamhaukar et al.

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