Method of etching contact openings with reduced removal rate of

Details Method of etching contact openings with reduced removal rate of Method of etching contact openings with reduced removal rate of

1995-06-07

1997-08-19

Dang, Thi

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438695, 438723, 438626, 438629, 438637, H01L 2100

Patent

active

056584253

ABSTRACT:
A process for etching of silicon oxide such as silicon dioxide, or oxynitride. The process includes etching a silicon oxide layer to expose an underlying electrically conductive titanium silicide layer and provide a contact opening extending through the silicon oxide layer to the electrically conductive titanium silicide layer. The etching is performed by exposing the silicon oxide layer to an etching gas in an ionized state in a reaction chamber of a plasma generating device. The etching gas includes a fluoride-containing gas and a passivating nitrogen gas which is present in an amount effective to suppress a removal rate of the electrically conductive titanium silicide layer when it is exposed to the etching gas during the etching step. The fluoride-containing gas can be CF.sub.4, CHF.sub.3, C.sub.2 F.sub.6, CH.sub.2 F.sub.2, SF.sub.6, other Freons and mixtures thereof. The etching gas can also include a carrier gas such as Ar, He, Ne, Kr or mixtures thereof. The etching can be reactive ion etching or plasma etching and the etching gas can be exposed to a microwave electric field and/or a magnetic field during the etching step. The etching gas reduces the amount of the titanium silicide layer etched during overetching thereof compared to the same etching gas without nitrogen.

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