Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-02-01
2005-02-01
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S701000, C438S713000, C216S067000
Reexamination Certificate
active
06849554
ABSTRACT:
Disclosed herein is a method of etching deep trenches in a substrate which utilizes the overlying mask structure to achieve a trench having a positive tapered sidewall angle of less than about 88°. The method employs the successive etching of a lateral undercut in the substrate beneath a masking material, while at the same time etching vertically downward beneath the mask. The coordinated widening of the lateral undercut at the top of the trench, while vertically extending the depth of the trench, is designed to provide the desired trench sidewall taper angle.
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Henri Jansen et al., “The black silicon method: a universal method for determining the parameter setting of a flourine-based reactive ion etcher in deep silicon trench etching with profile control,” J. Micromech. Microeng. (1995). pp. 115-120, vol. 5, United Kingdom.
Chinn Jeffrey D.
Rattner Michael
Applied Materials Inc.
Church Shirley L.
Vinh Lan
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