Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1998-07-29
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
148175, 156612, 438478, 438495, 438509, H07L 2144
Patent
active
061627062
ABSTRACT:
The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including the steps of performing a first thin epitaxial deposition, then an anneal; the conditions and the duration of the first epitaxial deposition and of the anneal being such that the arsenic diffusion length is much lower than the thickness of the layer formed in the first deposition; and performing a second epitaxial deposition for a chosen duration to obtain a desired total thickness.
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Ishii, et al., "Silicon Epitaxial Wafer With Abrupt Interface By Two Step Epitaxial Growth Technique" Journal Of The Electrochemical Society, vol. 122, No. 11, Nov. 1975, Manchester, New Hampshire, US, pp. 1523-1531.
Dutartre Didier
Jerier Patrick
Bowers Charles
Galanthay Theodore E.
Kilday Lisa
Morris James H.
STMicroelectronics S.A.
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