Method of enhancing the adhesion between photoresist layer...

Details Method of enhancing the adhesion between photoresist layer... Method of enhancing the adhesion between photoresist layer...

2007-03-13

2007-03-13

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21023

Reexamination Certificate

active

10710786

ABSTRACT:
A method of enhancing the adhesion between photoresist material and a substrate that can be applied to fabricate bumps on the substrate is provided. The bump fabrication process uses at least photoresist materials each having a different viscosity. A photoresist material having a smaller viscosity, that is, a higher fluidity, is permitted to contact a passivation layer so that all the gaps on the surface of the passivation layer are completely filled and a strong bond is formed between the photoresist layer and the passivation layer. With all the gaps on the substrate completely filled, solder material is prevented from filling the gaps to form a conductive bridge between neighboring bonding pads in a subsequent bump fabrication process.

REFERENCES:
patent: 6335216 (2002-01-01), Yoshida et al.
patent: 6372622 (2002-04-01), Tan et al.
patent: 6602775 (2003-08-01), Chen et al.
patent: 6649507 (2003-11-01), Chen et al.
patent: 6784089 (2004-08-01), Lei et al.
patent: 2003/0165770 (2003-09-01), Lee et al.
patent: 2005/0277245 (2005-12-01), Ohta et al.
patent: 10124826 (1998-05-01), None

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